MP4104 Mosfet Power Module High Power Switching Applications Hammer Drive, Pulse Motor Drive

TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type

(Four Darlington Power Transistors in One)

MP4104

High Power Switching Applications

Hammer Drive, Pulse Motor Drive and Inductive Load Switching

• Small package by full molding (SIP 10 pins)

• High collector power dissipation (4-device operation) : P_T = 4 W (Ta = 25°C)

• High collector current: I_{C (DC)} = 4 A (max)

• High DC current gain: h_FE = 2000 (min) (V_CE = 2 V, I_C = 1.5 A)

Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Industrial Applications Unit: mm

Weight: 2.1 g (typ.)

Array Configuration

Marking

thyristor diode module

low voltage power mosfet

MP4104 Mosfet Power Module High Power Switching Applications Hammer Drive, Pulse Motor Drive Images